| PART |
Description |
Maker |
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| R26-401-BGL R26-242-BGL R26-801-BGL R26-900-BGL R2 |
SPD (Surge Protective Device)
|
Okaya Electric America, Inc.
|
| STTS200211 |
2.3 V memory module temperature sensor with a 2 Kb SPD EEPROM
|
STMicroelectronics
|
| W3DG7232V10D2 W3DG7232V-D2 W3DG7232V7D2 W3DG7232V7 |
256MB - 32Mx72 SDRAM, REGISTER and SPD, w/PLL
|
White Electronic Designs Corporation
|
| W3DG7216V7D2 W3DG7216V75D2 W3DG7216V10D2 W3DG7216V |
64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD
|
White Electronic Designs Corporation
|
| STTS424E02BDA6E STTS424E02BDA6F STTS424E02BDW6E ST |
Memory module temperature sensor with a 2Kb SPD EEPROM
|
STMicroelectronics
|
| 52856-1 |
Ring and Spade Tongue Terminals; TERMINAL,PG SPD FLG 12-10 10 ( AMP )
|
Tyco Electronics
|
| M366S0824DT0 M366S1623DT0 |
8M x 64 SDRAM DIMM based on 4M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| 53013-1 |
Ring and Spade Tongue Terminals; TERMINAL,BUDG SPR SPD 12-10 5 ( AMP )
|
Tyco Electronics
|
| 52710-1 |
Ring and Spade Tongue Terminals; SOLIS SP SPD 22-16COM22-18MIL8 ( AMP )
|
Tyco Electronics
|
| 52512-1 |
Ring and Spade Tongue Terminals; TERMINAL,BUDG SPD FLG 26-22 4 ( AMP )
|
Tyco Electronics
|
